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1 jan. 2011 rev. 2. 1 bcd semiconductor manufacturing limited data sheet dual low noise operational amplifiers az4580 general description the az4580 is a monolithic dual low noise operational amplifier. it is specifically designed for audio systems to improve tone control; it can also be used in pre- amplifier, industrial meas urement tools and applica- tions where gain and phase matched channels are man- datory. the ic features in ternal frequency compensation, low noise, low distortion, high gain and high bandwidth. the az4580 can operate under dual power supply voltage up to 18v or single power supply up to 36v. the az4580 is available in dip-8, soic-8 and tssop-8 packages. features large signal voltage gain: 110db typical low input noise voltage: 0.7 v rms (riaa) typical wide gain bandwidth product: 15mhz at 10khz typical low distortion: 0.0005% typical slew rate: 7v/ s typical applications audio ac-3 decoder system audio amplifier soic-8 dip-8 figure 1. package types of az4580 tssop-8
2 jan. 2011 rev. 2. 1 bcd semiconductor manufacturing limited data sheet dual low noise operational amplifiers az4580 pin configuration figure 2. pin configuration of az4580 (soic-8/tssop-8) m/g package v cc output 2 input 2- input 2+ v ee output 1 input 1- input 1+ pin description pin no. function pin no. function pin no. function pin no. function 1 output 1 2 input 1- 3 input 1+ 4 v ee 5 input 2+ 6 input 2- 7 output 2 8 v cc 1 2 3 4 8 7 6 5 1 2 3 4 8 7 6 5 (dip-8) p package v cc output 2 input 2- input 2+ v ee output 1 input 1- input 1+
3 jan. 2011 rev. 2. 1 bcd semiconductor manufacturing limited data sheet dual low noise operational amplifiers az4580 figure 3. representative schemati c diagram of az4580 (each amplifier) functional block diagram v cc -input +input v ee output
4 jan. 2011 rev. 2. 1 bcd semiconductor manufacturing limited data sheet dual low noise operational amplifiers az4580 package temperature range part number marking id packing type lead free green lead free green soic-8 -40 to 85 o c az4580m-e1 az4580m-g1 4580m-e1 4580m-g1 tube az4580mtr-e1 az4580mtr-g1 4580m-e1 4580m-g1 tape & reel dip-8 -40 to 85 o c az4580p-e1 az4580p-g1 az4580p-e1 az4580p-g1 tube tssop-8 -40 to 85 o c az4580g-e1 az4580g-g1 eg80 gg80 tube az4580gtr-e1 AZ4580GTR-G1 eg80 gg80 tape & reel circuit type package m: soic-8 e1: lead free g1: green az4580 - tr: tape and reel blank: tube p: dip-8 ordering information bcd semiconductor's pb-free products, as designated with "e1" suff ix in the part number, are rohs compliant. products with "g1" suffix are available in green packages. g: tssop-8
5 jan. 2011 rev. 2. 1 bcd semiconductor manufacturing limited data sheet dual low noise operational amplifiers az4580 parameter smbol value unit power supply voltage v cc + 20 v v ee - 20 input voltage v i 15 v differential input voltage v id 30 v operating junction temperature t j 150 o c storage temperature range t stg -65 to 150 o c lead temperature (soldering 10s) t l 260 o c power dissipation (t a =25 o c) p d tssop-8 400 mw soic-8 500 dip-8 800 note 1: stresses greater than those listed under "absolute maximum ratings" may cause permanent damage to the device. these are stress ratings only, and functional operation of the device at these or any ot her conditions beyond those ind i- cated under "recommended operating conditi ons" is not implied. exposure to "a bsolute maximum ratings" for extended periods may affect device reliability. recommended operating conditions parameter min max unit supply voltage 2 18 v operating temperature range -40 85 o c absolute maximum ratings (note 1)
6 jan. 2011 rev. 2. 1 bcd semiconductor manufacturing limited data sheet dual low noise operational amplifiers az4580 operating conditions: v cc = + 15v, v ee =- 15v, t a =25 o c unless otherwise specified. parameter conditions min typ max unit supply current no load 4 7 ma input offset voltage r s 10k ? 0.5 3 mv input offset current v cm =0v 5 100 na input bias current v cm =0v 150 500 na input common mode voltage range 12 13.5 v common mode rejection ratio v cm =0v to v cc -1.5v, r s 10k ? 80 110 db large signal voltage gain r l =2k ? , v o = 10v 90 110 db power supply rejection ratio r s 10k ? 80 110 db output sink current v- = 1 v, v + = 0 v, v o =2v 80 ma output source current v + = 1 v, v- = 0 v, v o =2v 45 ma slew rate r l 2k ? 7 v/ s gain bandwidth product r l =2k ? , f=10khz 15 mhz total harmonic distortion a v =20db, v o =5v r l =2k ? , f=1khz 0.0005 % equivalent input noise voltage riaa r s =50 ? , 30khz lpf 0.7 v rms thermal resistance (junction to case) dip-8 43 o c/w soic-8 63 electrical characteristics
7 jan. 2011 rev. 2. 1 bcd semiconductor manufacturing limited data sheet dual low noise operational amplifiers az4580 typical performance characteristics figure 4. open loop voltage gain vs. frequency figu re 5. maximum output voltage swing vs. frequency figure 6. maximum output voltage swing figur e 7. equivalent input noise voltage density vs. load resistance vs. frequency 1 10 100 1k 10k 100k 1m 10m 0 10 20 30 40 50 60 70 80 90 100 110 120 v cc = 15v, v ee = -15v r l =2k ? , t a =25 o c open loop voltage gain (db) frequency (hz) 1 10 100 1k 0 5 10 15 20 frequency (hz) equivalent input noise voltage density (nv/(hz) 0.5 ) v cc = 15v, v ee = -15v r s =50 ? , t a =25 o c 0.1 1 10 12 14 16 18 20 22 24 26 28 30 v cc = 15v, v ee = -15v, t a =25 o c maximum output voltage swing (v) load resistance (k ? ) 100 1k 10k 100k 1m 10m 0 5 10 15 20 25 30 maximum output voltage swing (v) frequency (hz) v cc = 15v, v ee = -15v r l =2k ? , t a =25 o c
8 jan. 2011 rev. 2. 1 bcd semiconductor manufacturing limited data sheet dual low noise operational amplifiers az4580 typical applications figure 10. application of az4580 in an ac/dc converter typical performance ch aracteristics (continued) figure 8. input offset voltage vs.temperature figure 9. input bias current vs.temperature -25 0 25 50 75 100 125 -1.0 -0.5 0.0 0.5 1.0 1.5 2.0 v cc =15v v ee =-15v input offset voltage (mv) ambient temperature ( o c) -40 -20 0 20 40 60 80 100 120 0 50 100 150 200 v cc =15v v ee =-15v input bias current (na) ambient temperature ( o c) d2 d1 8 7 6 5 1 2 3 4 15k 20k 20k 10k v in v o 10 f 20k 6.2k 20k - + - + az4580
9 jan. 2011 rev. 2. 1 bcd semiconductor manufacturing limited data sheet dual low noise operational amplifiers az4580 typical applicat ions (continued) figure12. application of az4580 in tone control figure11. application of az4580 in a riaa preamp phono cartridge 33 f 100pf 47k 390 100 f 4.7nf 15nf 16k 200k 470 10 f 100k + - 1/2az4580 1/2 az4580 r7 3.6k v o r6 500k r5 3.6k v i r1 11k r2 100k r3 11k - + c3 0.005 f r4 11k c1 0.05 f c2 0.05 f boost -treble-cut boost -bass-cut
10 jan. 2011 rev. 2. 1 bcd semiconductor manufacturing limited data sheet dual low noise operational amplifiers az4580 mechanical dimensions dip-8 unit: mm(inch) 4 6 r0.750(0.030) 0.254(0.010)typ 0.130(0.005)min 8.200(0.323) 9.400(0.370) 0.204(0.008) 0.360(0.014) 7.620(0.300)typ 4 6 5 0.700(0.028) 9.000(0.354) 9.400(0.370) 3.710(0.146) 4.310(0.170) 3.000(0.118) 3.600(0.142) 0.360(0.014) 0.560(0.022) 2.540(0.100) typ 6.200(0.244) 6.600(0.260) 3.200(0.126) 3.600(0.142) 0.510(0.020)min 3.000(0.118) depth 0.100(0.004) 0.200(0.008) 1.524(0.060) typ note: eject hole, oriented hole and mold mark is optional.
11 jan. 2011 rev. 2. 1 bcd semiconductor manufacturing limited data sheet dual low noise operational amplifiers az4580 mechanical dimens ions (continued) soic-8 unit: mm(inch) 0 8 1 5 r 0 . 1 5 0 ( 0 . 0 0 6 ) r0.150(0.006) 1.000(0.039) 0.330(0.013) 0.510(0.020) 1.350(0.053) 1.750(0.069) 0.100(0.004) 0.300(0.012) 0.900(0.035) 0.800(0.031) 0.200(0.008) 3.800(0.150) 4.000(0.157) 7 7 2 0 : 1 d 1.270(0.050) typ 0.190(0.007) 0.250(0.010) 8 d 5.800(0.228) 6.200(0.244) 0.675(0.027) 0.725(0.029) 0.320(0.013) 8 0.450(0.017) 0.800(0.031) 4.700(0.185) 5.100(0.201) note: eject hole, oriented hole and mold mark is optional.
12 jan. 2011 rev. 2. 1 bcd semiconductor manufacturing limited data sheet dual low noise operational amplifiers az4580 mechanical dimens ions (continued) tssop-8 unit: mm(inch) 4.300(0.169) 0.400(0.016) 0.190(0.007) 0.300(0.012) see detail a detail a 2.900(0.114) 0.050(0.002) 0.150(0.006) 1.200(0.047) max 1.950(0.077) 0 8 12 top & bottom r0.090(0.004) 0.450(0.018) 0.750(0.030) 1.000(0.039) 6.400(0.252) 0.800(0.031) 1.050(0.041) 0.090(0.004) 0.200(0.008) gage plane seating plane 0.250(0.010) 3.100(0.122) 4.500(0.177) typ 0.650(0.026) typ typ typ r0.090(0.004) ref note: eject hole, oriented hole and mold mark is optional.
important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd., shenzhen office unit a room 1203, skyworth bldg., gaoxin ave.1.s., nanshan district, shenzhen, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corp. 30920 huntwood ave. hayward, ca 94544, usa tel : +1-510-324-2988 fax: +1-510-324-2788 - headquarters bcd semiconductor manufacturing limited no. 1600, zi xing road, shanghai zizhu sc ience-based industrial park, 200241, china tel: +86-21-24162266, fax: +86-21-24162277 bcd semiconductor manufacturing limited important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited

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